Modelling drain and gate dependence of HEMT 1-50 GHz, small-signal S-parameters, and d.c. drain current

We present refinements to a previously validated HEMT model that improves the model's accuracy as a function of drain bias for simulating d.c. drain current and 1-50 GHz, small-signal S-parameters. By comparing simulation data with experimental data for a 0.4-/spl mu/m-gate pseudomorphic HEMT,...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 1995-01, Vol.43 (1), p.213-216
Main Authors: Mahon, S.J., Skellern, D.J.
Format: Article
Language:English
Subjects:
Applied sciences
Capacitance
Electronics
Electrons
Exact sciences and technology
Frequency measurement
HEMTs
PHEMTs
Predictive models
Scattering parameters
Semiconductor device modeling
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor process modeling
Transistors
Voltage
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Summary:We present refinements to a previously validated HEMT model that improves the model's accuracy as a function of drain bias for simulating d.c. drain current and 1-50 GHz, small-signal S-parameters. By comparing simulation data with experimental data for a 0.4-/spl mu/m-gate pseudomorphic HEMT, we have been able to establish the accuracy of the refined model, which predicts the device's d.c. current and S-parameters as a function of the applied drain and gate biases to within an accuracy of /spl sim/5%. The core of the model and, in particular, its bias dependence, are directly dependent on the HEMT wafer structure and the physical gate length.< >
ISSN:0018-9480
1557-9670
DOI:10.1109/22.362988