Effect of Surface Electronic States of p-Type GaN on the Blue-Light-Emitting Diodes
The surface electronic states of p-type GaN and its effect on the light-emitting diodes (LEDs) containing such p-GaN layers are studied. The surface band bending of p-GaN layers prepared from different growth conditions are determined by ultraviolet photoemission spectroscopy and X-ray photoemission...
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| Published in: | Journal of the Electrochemical Society 2005, Vol.152 (11), p.G816-G818 |
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| Main Authors: | , , , |
| Format: | Article |
| Language: | eng |
| Online Access: | Get full text |
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| Summary: | The surface electronic states of p-type GaN and its effect on the light-emitting diodes (LEDs) containing such p-GaN layers are studied. The surface band bending of p-GaN layers prepared from different growth conditions are determined by ultraviolet photoemission spectroscopy and X-ray photoemission spectroscopy. By either way, it is found that the surface band bending depends on the growth conditions and is reduced by increasing Mg concentration, growth temperature, and N2-rich ambient. A further reduction in band bending is found with a postannealing at 750DGC in N2, resulting in a similar reduction of the operation forward voltage of the LED containing such a p-GaN layer. The mechanism involved is discussed. |
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| ISSN: | 0013-4651 1945-7111 |