MBE growth and properties of GaAsSbN/GaAs single quantum wells

The growth and properties of GaAsSbN single quantum wells (SQWs) are investigated in this work. The heterostructures were grown on GaAs substrates in an elemental solid source molecular beam epitaxy (MBE) system assisted with a RF plasma nitrogen source. A systematic study has been carried out to de...

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Bibliographic Details
Published in:Journal of crystal growth 2005-06, Vol.279 (3), p.293-302
Main Authors: Wu, Liangjin, Iyer, Shanthi, Nunna, Kalyan, Li, Jia, Bharatan, Sudhakar, Collis, Ward, Matney, Kevin
Format: Article
Language:English
Subjects:
A1. High-resolution X-ray diffraction
A1. Reflection high-energy electron diffraction
A3. Molecular beam epitaxy
A3. Quantum wells
B1. Nitride
B2. Semiconducting III–V materials
B3. Long wavelength laser diodes
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Iii-v semiconductors
Materials science
Nanoscale materials and structures: fabrication and characterization
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Photoluminescence
Physics
Quantum wells
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Summary:The growth and properties of GaAsSbN single quantum wells (SQWs) are investigated in this work. The heterostructures were grown on GaAs substrates in an elemental solid source molecular beam epitaxy (MBE) system assisted with a RF plasma nitrogen source. A systematic study has been carried out to determine the influence of various growth conditions, such as the growth temperature and the source shutter-opening sequence, on the quality of the grown layers and the incorporation of N and Sb. The effects of ex situ and in situ annealing under As overpressure on the optical properties of the layers have also been investigated. Substrate temperature in the range of 450–470 °C was found to be optimum. Simultaneous opening of the source shutters was found to yield sharper QW interfaces. N and Sb incorporations were found to depend strongly upon substrate temperatures and source shutter-opening sequences. A significant increase in PL intensity with a narrowing of PL line shape and blue shift in emission energy were observed on annealing the GaAsSbN/GaAs SQW, with in situ annealing under As overpressure providing better results, compared to ex situ annealing.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2005.02.033