9.4-W/mm power density AlGaN-GaN HEMTs on free-standing GaN substrates

9.4-W/mm power density AlGaN-GaN HEMTs on free-standing GaN substrates

High power microwave AlGaN-GaN high electron-mobility transistors (HEMTs) on free-standing GaN substrates are demonstrated for the first time. Measured gate leakage was -2.2 μA/mm at -20 V and -10 μA/mm at -45 V gate bias. When operated at a drain bias of 50 V, devices showed a record continuous-wav...

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Bibliographic Details
Published in:IEEE electron device letters 2004-09, Vol.25 (9), p.596-598
Main Authors: Chu, K.K., Chao, P.C., Pizzella, M.T., Actis, R., Meharry, D.E., Nichols, K.B., Vaudo, R.P., Xu, X., Flynn, J.S., Dion, J., Brandes, G.R.
Format: Article
Language:eng
Subjects:
Aluminum gallium nitride
Applied sciences
Bias
Degradation
Density
Devices
Electronics
Exact sciences and technology
Gallium nitride
Gallium nitrides
Gate leakage
Gates
HEMTs
High electron mobility transistors
Microwave and submillimeter wave devices, electron transfer devices
Microwave devices
Microwaves
MODFETs
Power generation
Radio frequency
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Stability
Transistors
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Summary:High power microwave AlGaN-GaN high electron-mobility transistors (HEMTs) on free-standing GaN substrates are demonstrated for the first time. Measured gate leakage was -2.2 μA/mm at -20 V and -10 μA/mm at -45 V gate bias. When operated at a drain bias of 50 V, devices showed a record continuous-wave output power density of 9.4 W/mm at 10 GHz with an associated power-added efficiency of 40%. Long-term stability of device RF operation was also examined. Under room conditions, devices driven at 25 V and 3-dB gain compression remained stable in 200 h, degrading only by 0.18 dB in output power. Such results illustrate the potential of GaN substrate technology in supporting reliable, high performance AlGaN-GaN HEMTs for microwave power applications.
ISSN:0741-3106
1558-0563