Analysis of I– V characteristics on Au/n-type GaAs Schottky structures in wide temperature range

The current–voltage ( I– V) characteristics of Au/n-GaAs Schottky barrier diodes (SBD) were determined in the temperature range 80–400 K. SBD parameters such as ideality factor n, series resistance R S and barrier height Φ b were extracted from I– V curves using Cheung's method. The barrier hei...

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Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2005-09, Vol.122 (2), p.133-139
Main Authors: Karatas, S, Altindal, S
Format: Article
Language:English
Subjects:
Barrier height
I– V characteristics
Schottky diodes
Temperature dependence
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Summary:The current–voltage ( I– V) characteristics of Au/n-GaAs Schottky barrier diodes (SBD) were determined in the temperature range 80–400 K. SBD parameters such as ideality factor n, series resistance R S and barrier height Φ b were extracted from I– V curves using Cheung's method. The barrier height for current transport decreases and the ideality factor increases with the decrease temperatures. Such behavior is attributed to barrier inhomogeneities by assuming a Gaussian distribution of barrier heights at the interface. So that barrier height Φ I– V have been corrected by taking into account quality factors ( n) and the electron tunneling factor ( αχ 1/2 δ) in the expression of saturation current ( I 0) of the Au/n-GaAs Schottky diodes. Thus, a modified ln ( I 0 / T 2 ) − q 2 σ 0 2 / 2 k 2 T 2 versus 1/ T gives Φ ¯ b0 ( T = 0 ) and A * as 0.73 eV and 11.08 A/(cm 2 K 2), respectively, without using the temperature coefficient of the barrier heights. Therefore, it has been concluded that the temperature dependent I– V characteristics of the device can be successfully explained with Gaussian distribution of the BHs.
ISSN:0921-5107
1873-4944
DOI:10.1016/j.mseb.2005.05.018