Transparent conductive In2O3:Mo thin films prepared by reactive direct current magnetron sputtering at room temperature

An amorphous transparent conductive oxide thin film of molybdenum-doped indium oxide (IMO) was prepared by reactive direct current magnetron sputtering at room temperature. The films formed on glass microscope slides show good electrical and optical properties: the low resistivity of 5DDT9x10-4D*W c...

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Bibliographic Details
Published in:Thin solid films 2006-04, Vol.500 (1-2), p.70-73
Main Authors: MIAO, Wei-Na, LI, Xi-Feng, QUN ZHANG, LI HUANG, ZHANG, Zhuang-Jian, LI ZHANG, YAN, Xue-Jian
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Deposition by sputtering
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
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Summary:An amorphous transparent conductive oxide thin film of molybdenum-doped indium oxide (IMO) was prepared by reactive direct current magnetron sputtering at room temperature. The films formed on glass microscope slides show good electrical and optical properties: the low resistivity of 5DDT9x10-4D*W cm, the carrier concentration of 5DDT2x1020cm-3, the carrier mobility of 20DDT2 cm2V-1s-1, and an average visible transmittance of about 90DDT1%. The investigation reveals that oxygen content influences greatly the carrier concentration and then the photoelectrical properties of the films. Atomic force microscope evaluation shows that the IMO film with uniform particle size and smooth surface in terms of root mean square of 0DDT8 nm was obtained.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2005.11.012