Evaluation of the temperature stability of AlGaN/GaN heterostructure FETs

Evaluation of the temperature stability of AlGaN/GaN heterostructure FETs

Temperature stress experiments up to 800/spl deg/C have been applied to AlGaN/GaN FET's grown by MOVPE on sapphire and their individual technological building blocks. It was found that the temperature limit is given by the irreversible degradation of the intrinsic active heterostructure materia...

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Bibliographic Details
Published in:IEEE electron device letters 1999-09, Vol.20 (9), p.448-450
Main Authors: Daumiller, I., Kirchner, C., Kamp, M., Ebeling, K.J., Kohn, E.
Format: Article
Language:eng
Subjects:
Aluminum gallium nitride
Aluminum gallium nitrides
Degradation
Devices
Epitaxial growth
FETs
Gallium nitride
Gallium nitrides
Gold
Heterostructures
Sapphire
Semiconductor materials
Stability
Stress
Stresses
Temperature
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Summary:Temperature stress experiments up to 800/spl deg/C have been applied to AlGaN/GaN FET's grown by MOVPE on sapphire and their individual technological building blocks. It was found that the temperature limit is given by the irreversible degradation of the intrinsic active heterostructure material itself during operation above 600/spl deg/C. The irreversible degradation was observed for both unconnected and electrically operated devices during temperature stress.
ISSN:0741-3106
1558-0563