Photoluminescence characteristics of low indium composition InGaN thin films grown on sapphire by metalorganic chemical vapor deposition

The wavelength shifts in the photoluminescence (PL) from low indium composition (∼ 3%) InGaN epitaxial thin films, grown on sapphire substrates by metalorganic chemical vapour deposition, has been studied by a combination of experiment and theory. As temperature increases from 6 K, the PL peak energ...

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Bibliographic Details
Published in:Thin solid films 2006-03, Vol.498 (1), p.118-122
Main Authors: Feng, Z.C., Liu, W., Chua, S.J., Yu, J.W., Yang, C.C., Yang, T.R., Zhao, J.
Format: Article
Language:English
Subjects:
Characterization
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Crystal structure
Exact sciences and technology
GaN
Iii-v semiconductors
InGaN
Materials science
Metalorganic chemical vapor deposition
Methods of deposition of films and coatings
film growth and epitaxy
MOCVD
Nitrides
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Phase separation
Photoluminescence
Physics
Segregation
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Summary:The wavelength shifts in the photoluminescence (PL) from low indium composition (∼ 3%) InGaN epitaxial thin films, grown on sapphire substrates by metalorganic chemical vapour deposition, has been studied by a combination of experiment and theory. As temperature increases from 6 K, the PL peak energy red-shifts very slightly first, then blue-shifts to reach a maximum at near 100 K, and red-shifts again till room temperature. This unique PL behaviour, indicating the existence of the phase separation, is interpreted qualitatively from the spatial variation of band structure due to the In-compositional fluctuation. Theoretical calculation, based upon a model involving the band-tail states in the radiative recombination, explains the experimental data successfully.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2005.07.087