Evaluation of tin nitride (Sn 3 N 4 ) via atomic layer deposition using novel volatile Sn precursors

Novel Sn precursors, Sn(tbip) 2 , Sn(tbtp) 2 , and Sn(tbta) 2 , were synthesized and characterized using various analytical techniques and density functional theory calculations. These precursors contained cyclic amine ligands derived from iminopyrrolidine. X-ray crystallography revealed the formati...

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Bibliographic Details
Published in:Dalton transactions : an international journal of inorganic chemistry 2023-10, Vol.52 (41), p.15033-15042
Main Authors: Park, Hyeonbin, Choi, Heenang, Shin, Sunyoung, Park, Bo Keun, Kang, Kibum, Ryu, Ji Yeon, Eom, Taeyong, Chung, Taek-Mo
Format: Article
Language:English
Subjects:
Ammonia
Atomic layer epitaxy
Crystallography
Density functional theory
Photovoltaic cells
Precursors
Synthesis
Thermogravimetric analysis
Thin films
Tin
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Summary:Novel Sn precursors, Sn(tbip) 2 , Sn(tbtp) 2 , and Sn(tbta) 2 , were synthesized and characterized using various analytical techniques and density functional theory calculations. These precursors contained cyclic amine ligands derived from iminopyrrolidine. X-ray crystallography revealed the formation of monomeric SnL 2 with distorted seesaw geometry. Thermogravimetric analysis demonstrated the exceptional volatility of all complexes. Sn(tbtp) 2 showed the lowest residual weight of 2.7% at 265 °C. Sn 3 N 4 thin films were successfully synthesized using Sn(tbtp) 2 as the Sn precursor and NH 3 plasma. The precursor exhibited ideal characteristics for atomic layer deposition, with a saturated growth per cycle value of 1.9 Å cy −1 and no need for incubation when the film was deposited at 150–225 °C. The indirect optical bandgap of the Sn 3 N 4 film was approximately 1–1.2 eV, as determined through ultraviolet–visible spectroscopy. Therefore, this study suggests that the Sn 3 N 4 thin films prepared using the newly synthesized Sn precursor are suitable for application in thin-film photovoltaic devices.
ISSN:1477-9226
1477-9234
DOI:10.1039/d3dt02138f