Excess noise in AlGaAs/GaAs heterojunction bipolar transistors and associated TLM test structures

Noise measurements both on transmission line model (TLM) test structures and on associated HBT's are presented. Contact noise is proved to be negligible in the TLM's related to the base structure of transistors. A Hooge parameter for p/sup ++/ doped GaAs is extracted. Activation energies a...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1994-11, Vol.41 (11), p.2000-2005
Main Authors: Delseny, C., Pascal, F., Jarrix, S., Lecoy, G., Dangla, J., Dubon-Chevallier, C.
Format: Article
Language:English
Subjects:
Applied sciences
Charge carriers
Current measurement
Electronics
Energy measurement
Exact sciences and technology
Gallium arsenide
Heterojunction bipolar transistors
Noise level
Noise measurement
Temperature measurement
Testing
Testing, measurement, noise and reliability
Transmission line measurements
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Summary:Noise measurements both on transmission line model (TLM) test structures and on associated HBT's are presented. Contact noise is proved to be negligible in the TLM's related to the base structure of transistors. A Hooge parameter for p/sup ++/ doped GaAs is extracted. Activation energies are calculated from results versus temperature. Considering the TLM related to the structure of the emitter, it is shown that the g-r levels observed originate from the AlGaAs layer. Noise measurements on HBT's also exhibit excess noise. A value of the cutoff frequency between the equivalent input current white noise and the 1/f component is given. The base current dependencies associated with different measurement configurations suggest the 1/f noise to come from the base or the emitter-base junction. The g-r components are studied as a function of temperature. Activation energies are deduced. Finally a comparison of the TLM and HBT noise results is presented. The presence of the complex DX center and of g-r levels in the base region are proposed as possible origins for the g-r noise in HBT's.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.333817