Temperature dependence of DC and RF characteristics of AlInAs/GaInAs HBT's

Device characteristics of compositionally graded AlInAs/GaInAs heterojunction bipolar transistors (HBTs) measured and analyzed from cryogenic temperatures up to 250 degrees C are discussed. Excellent stability in DC and RF performance is observed at elevated temperatures, which is desirable for high...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1993-09, Vol.40 (9), p.1583-1588
Main Authors: Hafizi, M., Stanchina, W.E., Metzger, R.A., Macdonald, P.A., Williams, F.
Format: Article
Language:English
Subjects:
Application specific integrated circuits
Applied sciences
Circuit stability
Cryogenics
Electronics
Exact sciences and technology
Gain measurement
Heterojunction bipolar transistors
Integrated circuit measurements
Radio frequency
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Temperature dependence
Temperature distribution
Temperature measurement
Transistors
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Summary:Device characteristics of compositionally graded AlInAs/GaInAs heterojunction bipolar transistors (HBTs) measured and analyzed from cryogenic temperatures up to 250 degrees C are discussed. Excellent stability in DC and RF performance is observed at elevated temperatures, which is desirable for high-speed and high-density integrated circuit applications. DC current gain exhibits about 10% variation over the entire measured temperature range. F/sub T/ and f/sub max/ at 125 degrees C decreased by approximately 10% from their room-temperature values while improving steadily when the device was cooled down to near-liquid-helium temperature, the common-emitter breakdown voltage is 8.0 V at room temperature and reduces to 7.5 V at 125 degrees C. Likewise, the collector-base breakdown voltage and the base-emitter breakdown voltage reduce by about 0.5 V over the same temperature range. The breakdown voltages increase significantly at cryogenic temperatures. The low turn-on voltage and excellent low-temperature characteristics make the AlInAs/GaInAs HBT attractive for cryogenic applications.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.231562