The role of axially nonuniform carrier density in altering the TE-TE gain margin in InGaAsP-InP DFB lasers

Axial nonuniformities in the carrier density profile of 1.55 mu m capped-mesa-buried-heterostructure distributed-feedback (CMBH-DFB) InGaAsP-InP diode lasers are discussed. This is accomplished by directly measuring the spontaneous emission at various locations in the laser optical cavity. The autho...

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Bibliographic Details
Published in:IEEE journal of quantum electronics 1991-04, Vol.27 (4), p.957-964, Article 957
Main Authors: Ketelsen, L.J.P., Hoshino, I., Ackerman, D.A.
Format: Article
Language:English
Subjects:
Charge carrier density
Degradation
Diode lasers
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Gain measurement
Laser modes
Lasers
Optical devices
Optical saturation
Optics
Physics
Semiconductor lasers
laser diodes
Spontaneous emission
Stimulated emission
Tellurium
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Summary:Axial nonuniformities in the carrier density profile of 1.55 mu m capped-mesa-buried-heterostructure distributed-feedback (CMBH-DFB) InGaAsP-InP diode lasers are discussed. This is accomplished by directly measuring the spontaneous emission at various locations in the laser optical cavity. The authors observe that the highly asymmetric optical field, inherent in DFB lasers, produces a strong longitudinal nonuniformity in the carrier density. This promotes degradation of the lasing gain margin between the dominant TE Bragg modes, which is verified through measurements of the relative shift of the lasing mode in the stopband. The reduction of gain margin is shown to cause multimode operation in devices with large optical field asymmetries. In devices with modest optical field asymmetries, the reduction of the gain margin saturates, and single mode behavior is maintained. Measurements are consistent in many respects with the predicted consequences of spatial hole burning.< >
ISSN:0018-9197
1558-1713
DOI:10.1109/3.83330