Strain-overcompensated GaInP-AlGaInP quantum-well laser structures for improved reliability at high-output powers

Strain-overcompensated multiple-quantum-well (MQW) laser structures have been analyzed theoretically as well as experimentally for the first time. Strain overcompensation reduces the bandgap shrinkage that normally takes place at the facets of compressively strained layers because of strain relaxati...

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Bibliographic Details
Published in:IEEE journal of selected topics in quantum electronics 1997-04, Vol.3 (2), p.180-187
Main Authors: Valster, A., Meney, A.T., Downes, J.R., Faux, D.A., Adams, A.R., Brouwer, A.A., Corbijn, A.J.
Format: Article
Language:English
Subjects:
Capacitive sensors
Diode lasers
Laser theory
Mirrors
Photonic band gap
Power generation
Quantum well lasers
Semiconductor lasers
Temperature
Zinc
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Summary:Strain-overcompensated multiple-quantum-well (MQW) laser structures have been analyzed theoretically as well as experimentally for the first time. Strain overcompensation reduces the bandgap shrinkage that normally takes place at the facets of compressively strained layers because of strain relaxation. This results in a lower absorption of the laser spot leading to a remarkable improvement of the reliability of high-power laser diodes.
ISSN:1077-260X
1558-4542
DOI:10.1109/2944.605653