Threshold conditions for an ultraviolet wavelength GaN quantum-well laser

This paper describes an analysis of the threshold conditions for a GaN-AlGaN strained quantum-well (QW) laser. Gain spectra are computed using a many-body microscopic laser theory. The spontaneous emission rates are extracted from the gain spectra using a phenomenological expression based on energy...

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Bibliographic Details
Published in:IEEE journal of selected topics in quantum electronics 1998-05, Vol.4 (3), p.514-519
Main Authors: Chow, W.W., Crawford, M.H., Girndt, A., Koch, S.W.
Format: Article
Language:English
Subjects:
Aluminum gallium nitride
Energy conservation
Gallium nitride
Laser theory
Microscopy
Optical design
Quantum well lasers
Quantum wells
Spontaneous emission
Threshold current
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Summary:This paper describes an analysis of the threshold conditions for a GaN-AlGaN strained quantum-well (QW) laser. Gain spectra are computed using a many-body microscopic laser theory. The spontaneous emission rates are extracted from the gain spectra using a phenomenological expression based on energy conservation arguments. From the gain and spontaneous emission spectra, threshold current densities are estimated. Inhomogeneous broadening due to spatial variations in QW thickness are included in the analysis. Gain-current characteristics are determined for a number of laser heterostructure designs where the GaN QW width and Al composition of the AlGaN barrier material are varied.
ISSN:1077-260X
1558-4542
DOI:10.1109/2944.704111