Strongly index-guided II-VI laser diodes

Ridge-waveguide laser diodes based on Be-chalcogenides have been fabricated by reactive ion etching and planarization with polyimide. Etching close to or even through the active layer is demonstrated to suppress the current spreading efficiently; resulting in a significant reduction of the threshold...

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Bibliographic Details
Published in:IEEE photonics technology letters 2000-03, Vol.12 (3), p.236-238
Main Authors: Legge, M., Bacher, G., Bader, S., Forchel, A., Lugauer, H.-J., Waag, A., Landwehr, G.
Format: Article
Language:English
Subjects:
Beryllium
Diode lasers
Etching
Laser diodes
Molecular beam epitaxial growth
Optical device fabrication
Optical pulses
Planarization
Polyimide resins
Polyimides
Power generation
Reactive ion etching
Spreading
Temperature
Threshold current
Threshold currents
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Summary:Ridge-waveguide laser diodes based on Be-chalcogenides have been fabricated by reactive ion etching and planarization with polyimide. Etching close to or even through the active layer is demonstrated to suppress the current spreading efficiently; resulting in a significant reduction of the threshold current as compared to gain-guided structures. This allows the fabrication of narrow, strongly index-guided II-VI laser diodes with a ratio between the vertical and the lateral far-field angle of, e.g., 1.2:1 for L/sub m/=1 μm.
ISSN:1041-1135
1941-0174
DOI:10.1109/68.826899