Raman scattering characterization of macro- and nanoporous silicon

The structural properties and Raman scattering spectra of porous silicon layers were investigated. The enhancement of intensity of Raman line from porous silicon in comparison with a substrate without any shift of peak position was observed. It is shown that this effect is due to presence of macropo...

Full description

Saved in:
Bibliographic Details
Published in:Applied surface science 2005-04, Vol.243 (1), p.30-35
Main Authors: Korsunska, N., Bulakh, B., Jumayev, B., Khomenkova, L., Yukhymchuk, V., Torchynska, T.
Format: Article
Language:English
Subjects:
Atomic force microscopy
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Disordered solids
Elemental semiconductors and insulators
Exact sciences and technology
Infrared and raman spectra and scattering
Nanoporous silicon
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Physics
Powders, porous materials
Raman scattering effect
Structure of solids and liquids
crystallography
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The structural properties and Raman scattering spectra of porous silicon layers were investigated. The enhancement of intensity of Raman line from porous silicon in comparison with a substrate without any shift of peak position was observed. It is shown that this effect is due to presence of macropores in investigated samples. The enhancement is explained by multiple absorption of probe light scattered and reflected inside macropores while a coincidence of shape and peak position of Raman lines from porous layer and silicon substrate is due to low thickness of nanoporous layer. The method of investigation of porous layer structure based on the combination of Raman scattering effect with variation of probe light wavelength is proposed.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2004.06.151