Indentation-induced phase transformations in silicon: influences of load, rate and indenter angle on the transformation behavior

Nanoindentation has been used widely to study pressure-induced phase transformations in Si. Here, a new aspect of the behavior is examined by making nanoindentations on (1 0 0) single crystals using a series of triangular pyramidal indenters with centerline-to-face angles varying from 35.3° to 85.0°...

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Bibliographic Details
Published in:Acta materialia 2005-04, Vol.53 (6), p.1759-1770
Main Authors: Jang, Jae-il, Lance, M.J., Wen, Songqing, Tsui, Ting Y., Pharr, G.M.
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Nanoindentation
Other topics in materials science
Phase transformations
Physics
Raman spectroscopy
Silicon
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Summary:Nanoindentation has been used widely to study pressure-induced phase transformations in Si. Here, a new aspect of the behavior is examined by making nanoindentations on (1 0 0) single crystals using a series of triangular pyramidal indenters with centerline-to-face angles varying from 35.3° to 85.0°. Effects of indenter angle, maximum load, and loading/unloading rate are systematically characterized from nanoindentation load–displacement data in conjunction with micro-Raman imaging spectroscopy of the residual hardness impressions. Results are discussed in terms of prevailing ideas and models for indentation-induced phase transformations in silicon.
ISSN:1359-6454
1873-2453
DOI:10.1016/j.actamat.2004.12.025