Pulsed laser deposition of epitaxial Al-doped ZnO film on sapphire with GaN buffer layer

Al-doped ZnO (ZnO:Al) films with thickness in the range of 0.5–0.9 μm were grown epitaxially on epi-GaN/sapphire (0001) by pulsed laser deposition (PLD; XeCl, λ=308 nm). The growth parameters such as substrate temperature, oxygen pressure and pulse repetition rate were established in a sequential ma...

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Bibliographic Details
Published in:Thin solid films 2005-07, Vol.484 (1), p.174-183
Main Authors: Kumar, Manoj, Mehra, R.M., Wakahara, Akihiro, Ishida, M., Yoshida, Akira
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Epi-GaN buffer layer
Epitaxial ZnO:Al
Exact sciences and technology
Ii-vi semiconductors
Laser deposition
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Photoluminescence
Physics
PLD
Sapphire
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Summary:Al-doped ZnO (ZnO:Al) films with thickness in the range of 0.5–0.9 μm were grown epitaxially on epi-GaN/sapphire (0001) by pulsed laser deposition (PLD; XeCl, λ=308 nm). The growth parameters such as substrate temperature, oxygen pressure and pulse repetition rate were established in a sequential manner to obtain highly epitaxial ZnO:Al film. The best films were obtained at substrate temperature of 400 °C, oxygen pressure of 1 mTorr and pulse repetition rate of 5 Hz. Reflection high-energy electron diffraction (RHEED) and low temperature photoluminescence (PL) studies confirm the high quality epitaxial nature of the film with near match and stacking order between ZnO and GaN.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2005.03.011