Wafer bonding and epitaxial transfer of GaSb-based epitaxy to GaAs for monolithic interconnection of thermophotovoltaic devices

GaInAsSb/AlGaAsSb/InAsSb/GaSb epitaxial layers were bonded to semi-insulating (SI) GaAs handle wafers with SiO^sub x^/Ti/Au as the adhesion layer for monolithic interconnection of thermophotovolatic (TPV) devices. Epitaxial transfer was completed by removal of the GaSb substrate, GaSb buffer, and In...

Full description

Saved in:
Bibliographic Details
Published in:Journal of electronic materials 2004-03, Vol.33 (3), p.213-217
Main Authors: WANG, C. A, SHIAU, D. A, DEPOY, D. M, NICHOLS, G, MURPHY, P. G, O'BRIEN, P. W, HUANG, R. K, CONNORS, M. K, ANDERSON, A. C, DONETSKY, D, ANIKEEV, S, BELENKY, G
Format: Article
Language:English
Subjects:
Circuits
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Electronics
Exact sciences and technology
Iii-v semiconductors
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Photoluminescence
Physics
Vapor phase epitaxy
growth from vapor phase
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:GaInAsSb/AlGaAsSb/InAsSb/GaSb epitaxial layers were bonded to semi-insulating (SI) GaAs handle wafers with SiO^sub x^/Ti/Au as the adhesion layer for monolithic interconnection of thermophotovolatic (TPV) devices. Epitaxial transfer was completed by removal of the GaSb substrate, GaSb buffer, and InAsSb etch-stop layer by selective chemical etching. The SiO^sub x^/Ti/Au provides not only electrical isolation, but also high reflectivity and is used as an internal backsurface reflector (BSR). Characterization of wafer-bonded (WB) epitaxy by high-resolution x-ray diffraction (HRXRD) and time-decay photoluminescence (PL) indicates minimal residual stress and enhancement in optical quality. The 0.54-eV GaInAsSb cells were fabricated and monolithically interconnected in series. A ten-junction device exhibited linear voltage building with an opencircuit voltage of 1.8 V.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-004-0182-y