Evolution mechanism of heterointerface cross-section during growth of GaAs ridge quantum wires by selective molecular beam epitaxy

The mechanism determining heterointerface cross-sections is studied for GaAs ridge quantum wires (QWRs) grown by selective molecular beam epitaxy (MBE). Arrays of 〈-1 1 0〉- and 〈-1 -1 2〉-orientated QWRs were grown on (0 0 1) and (1 1 1)B GaAs patterned substrates, respectively. A detailed investigat...

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Bibliographic Details
Published in:Applied surface science 2004-07, Vol.234 (1), p.11-15
Main Authors: Sato, Taketomo, Tamai, Isao, Yoshida, Souichi, Hasegawa, Hideki
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
GaAs
Growth mechanism
Molecular beam epitaxy (MBE)
Patterned substrate
Physics
Selective growth
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Summary:The mechanism determining heterointerface cross-sections is studied for GaAs ridge quantum wires (QWRs) grown by selective molecular beam epitaxy (MBE). Arrays of 〈-1 1 0〉- and 〈-1 -1 2〉-orientated QWRs were grown on (0 0 1) and (1 1 1)B GaAs patterned substrates, respectively. A detailed investigation of cross-sections of wires has shown that the boundary planes appear on both sides of QWRs, keeping a constant angle, θ, with respect to the flat top of the substrate pattern, and they determine the lateral wire width. Their evolution mechanism has turned out to be a kinetic process, reflecting differences in migration and atom incorporation rates on different facets. Simple formulas for θ have been derived, and they have shown excellent agreements with experiment. This has led to precise kinetic control of the wire width by growth conditions.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2004.05.018