Substrate effects of ZnO thin films prepared by PLD technique

ZnO thin films are prepared on the glass, GaAs (100), Si(111), and Si(100) substrates at different temperatures by the pulsed laser deposition (PLD) method. X-ray diffraction (XRD) measurements indicate that the substrate temperatures of 200–500, 200–500, 300–500, and 300–500 °C are the optimized co...

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Bibliographic Details
Published in:Journal of the European Ceramic Society 2004, Vol.24 (6), p.1015-1018
Main Authors: Shan, F.K., Shin, B.C., Jang, S.W., Yu, Y.S.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Ii-vi semiconductors
Laser deposition
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Optical properties
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Photoluminescence
Physics
Substrate effects
X-ray methods
ZnO
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Summary:ZnO thin films are prepared on the glass, GaAs (100), Si(111), and Si(100) substrates at different temperatures by the pulsed laser deposition (PLD) method. X-ray diffraction (XRD) measurements indicate that the substrate temperatures of 200–500, 200–500, 300–500, and 300–500 °C are the optimized conditions of crystalline for the glass, GaAs (100), Si (111), and Si (100) substrates, respectively. In spite of the films deposited on the different substrates, the films always show (002) orientation at the optimized conditions. Photoluminescence (PL) results indicate that the thin films fabricated at the optimized conditions show the intense near band PL emissions. The optimized conditions for PL are 500, 500, 400–500, and 500 °C for glass, GaAs (100), Si (111), and Si (100) substrates, respectively.
ISSN:0955-2219
1873-619X
DOI:10.1016/S0955-2219(03)00397-2