Solid phase reactions between Fe thin films and Si-Ge layers on Si

Solid phase reactions in Fe thin films on epi-Si 0.8Ge 0.2, poly-Si 0.7Ge 0.3, a-Si 0.8Ge 0.2, and a-Si 0.7Ge 0.3 layers on silicon have been investigated. The as-deposited samples were in situ annealed in the ultrahigh vacuum chamber at 400–800 °C for 30 min. The island structure was found to cause...

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Bibliographic Details
Published in:Thin solid films 2004-08, Vol.461 (1), p.81-85
Main Authors: Yu, C.H, Chueh, Y.L, Lee, S.W, Cheng, S.L, Chen, L.J, Chou, L.J, Cheng, L.W
Format: Article
Language:English
Subjects:
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cold working, work hardening
annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
Cold working, work hardening
annealing, quenching, tempering, recovery, and recrystallization
textures
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Iron germanosilicide
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
SiGe
Solid phase reaction
Treatment of materials and its effects on microstructure and properties
β-FeSi 2
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Summary:Solid phase reactions in Fe thin films on epi-Si 0.8Ge 0.2, poly-Si 0.7Ge 0.3, a-Si 0.8Ge 0.2, and a-Si 0.7Ge 0.3 layers on silicon have been investigated. The as-deposited samples were in situ annealed in the ultrahigh vacuum chamber at 400–800 °C for 30 min. The island structure was found to cause the abrupt increase in the sheet resistance of the annealed Fe/SiGe samples at 700–800 °C. The formation of FeSi islands containing a small amount of Ge is attributed to the preferential reactions of Fe with Si to Ge. As the annealing temperature was raised to 800 °C, the Fe(Si 1− x Ge x ) phase is the only phase found in the annealed Fe/epi-Si 0.8Ge 0.2 and Fe/poly-Si 0.7Ge 0.3 samples. On the other hand, at the annealing temperature above 700 °C, the β-Fe(Si 1− x Ge x ) 2 phase was observed in the annealed Fe/a-Si 0.8Ge 0.2 and Fe/a-Si 0.7Ge 0.3 but the Fe(Si 1− x Ge x ) is still the dominant phase. The results indicate that the formation of Fe disilicide was retarded by the presence of Ge atoms.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2004.02.069