A Unipolar Quantum Dot Diode Structure for Advanced Quantum Light Sources

Triggered, indistinguishable single photons are crucial in various quantum photonic implementations. Here, we realize a novel n+–i–n++ diode structure embedding semiconductor quantum dots: the gated device enables spectral tuning of the transitions and deterministic control of the charged states. Bl...

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Bibliographic Details
Published in:Nano letters 2023-07, Vol.23 (14), p.6574-6580
Main Authors: Strobel, Tim, Weber, Jonas H., Schmidt, Marcel, Wagner, Lukas, Engel, Lena, Jetter, Michael, Wieck, Andreas D., Portalupi, Simone L., Ludwig, Arne, Michler, Peter
Format: Article
Language:English
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Summary:Triggered, indistinguishable single photons are crucial in various quantum photonic implementations. Here, we realize a novel n+–i–n++ diode structure embedding semiconductor quantum dots: the gated device enables spectral tuning of the transitions and deterministic control of the charged states. Blinking-free single-photon emission and high two-photon indistinguishability are observed. The line width’s temporal evolution is investigated across over 6 orders of magnitude time scales, combining photon-correlation Fourier spectroscopy, high-resolution photoluminescence spectroscopy, and two-photon interference (visibility of V TPI,2ns = (85.8 ± 2.2)% and V TPI,9ns = (78.3 ± 3.0)%). Most of the dots show no spectral broadening beyond ∼9 ns time scales, and the photons’ line width ((420 ± 30) MHz) deviates from the Fourier-transform limit by a factor of 1.68. The combined techniques verify that most dephasing mechanisms occur at time scales ≤2 ns, despite their modest impact. The presence of n-doping implies higher carrier mobility, enhancing the device’s appeal for high-speed tunable, high-performance quantum light sources.
ISSN:1530-6984
1530-6992
DOI:10.1021/acs.nanolett.3c01658