Germanium orthogonal strip detectors with amorphous-semiconductor contacts

Germanium orthogonal strip detectors have been produced using amorphous-semiconductor contacts. The amorphous-semiconductor contact fabrication process is relatively simple, and it is capable of producing fine-pitched electrode structures. The bipolar blocking behavior of the amorphous-semiconductor...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2000-08, Vol.47 (4), p.1360-1363
Main Authors: Luke, P.N., Amman, M., Phlips, B.F., Johnson, W.N., Kroeger, R.A.
Format: Article
Language:English
Subjects:
Amorphous materials
Contacts
Detectors
Diffusion
Diffusion barriers
Electrodes
Energy resolution
Fabrication
Germanium
Laboratories
Spatial resolution
Strip
Strips
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Summary:Germanium orthogonal strip detectors have been produced using amorphous-semiconductor contacts. The amorphous-semiconductor contact fabrication process is relatively simple, and it is capable of producing fine-pitched electrode structures. The bipolar blocking behavior of the amorphous-semiconductor contact permits its use on both sides of a detector, replacing conventional B ion implanted and Li diffused contacts. A 5/spl times/5 orthogonal strip detector has been produced using this technique. Experimental results from this detector are presented.
ISSN:0018-9499
1558-1578
DOI:10.1109/23.872978