Fully Transparent ZnO Thin-Film Transistor Produced at Room Temperature

Fully transparent thin‐film transistors (TFTs) are produced at room temperature by radiofrequency magnetron sputtering. Measuring the drain current (IDS) as a function of drain voltage (VDS) at different gate voltages (VGS) shows the TFTs possess “hard saturation” with on‐currents of about 0.2 mA (s...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2005-03, Vol.17 (5), p.590-594
Main Authors: Fortunato, E. M. C., Barquinha, P. M. C., Pimentel, A. C. M. B. G., Gonçalves, A. M. F., Marques, A. J. S., Pereira, L. M. N., Martins, R. F. P.
Format: Article
Language:English
Subjects:
Field-effect transistors
Zinc oxide
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Summary:Fully transparent thin‐film transistors (TFTs) are produced at room temperature by radiofrequency magnetron sputtering. Measuring the drain current (IDS) as a function of drain voltage (VDS) at different gate voltages (VGS) shows the TFTs possess “hard saturation” with on‐currents of about 0.2 mA (see Figure) and saturation mobilities of 20 cm2 V–1 s–1. The optical and electrical properties and the compatibility of the fabrication process with low‐cost plastic substrates show promise for invisible and flexible electronic circuits.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.200400368