Measurements of mass attenuation coefficients around the K absorption edge of semiconductors by parametric X-rays

When relativistic charged particles pass through a crystal, the crystal atom generates polarization radiation, and photons are emitted in the crystal. These photons are scattered and subject to interference by the periodic crystalline structure, and are emitted around the Bragg angle for X-ray diffr...

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Published in:Radiation physics and chemistry (Oxford, England : 1993) England : 1993), 2004-10, Vol.71 (3), p.643-645
Main Authors: Akimoto, Tadashi, Yoshida, Tsuyoshi, Nakamura, Ryousuke, Sato, Kouichi, Murai, Ikuo, Fujita, Fumiyuki
Format: Article
Language:English
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Summary:When relativistic charged particles pass through a crystal, the crystal atom generates polarization radiation, and photons are emitted in the crystal. These photons are scattered and subject to interference by the periodic crystalline structure, and are emitted around the Bragg angle for X-ray diffraction. This phenomenon is called parametric X-ray radiation (PXR). The PXR has several outstanding characteristics: (1) good quality monochromatic X-rays; (2) X-ray energies can be continuously changed by rotating the crystal; (3) strong directional oriented X-rays; and (4) the X-ray energy does not depend on the energy of the incident particles (Schagin et al., 1996). In addition, good monochromatic hard X-rays are easily obtained in a simple system with only a crystal on the accelerator beam. It is easy to separate the PXR from the incident charged particles, because the PXR emission is at an angle with the incident particles. With the above characteristics of PXR application of PXR can be expected. This study describes measurements of the attenuation coefficient for semiconductors with the K absorption edge around 10 keV as an example of a monochromatic hard X-ray source of PXR, and the utility of the PXR is examined.
ISSN:0969-806X
1879-0895
DOI:10.1016/j.radphyschem.2004.04.037