High-Power AlGaInP Light-Emitting Diodes with Patterned Copper Substrates by Electroplating

We have developed a large-area (1.2 mm ×1.2 mm) chip structure for high-power AlGaInP/mirror/Cu light-emitting diodes (LEDs) to improve both the heat dissipation and substrate light-absorbing problems encountered in conventional AlGaInP/GaAs LED samples. Especially, this LED samples can be accomplis...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2004-04, Vol.43 (4B), p.L576-L578
Main Authors: Horng, Ray-Hua, Lee, Chia-En, Kung, Chung-Yuan, Huang, Shao-Hua, Wuu, Dong-Sing
Format: Article
Language:English
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Summary:We have developed a large-area (1.2 mm ×1.2 mm) chip structure for high-power AlGaInP/mirror/Cu light-emitting diodes (LEDs) to improve both the heat dissipation and substrate light-absorbing problems encountered in conventional AlGaInP/GaAs LED samples. Especially, this LED samples can be accomplished without additional dicing process. It was found that the peak-spectral wavelength of the AlGaInP LED with an electroplated copper substrate exhibited only about 3 nm shift at 400 mA, corresponding to a ∼30°C rising in the junction temperature. However, the junction temperature increased to 110°C easily for the AlGaInP/GaAs LED sample under a current injection of 400 mA. This indicates that the joule heating is less pronounced for the high-power AlGaInP/mirror/Cu LED sample where the metallic substrate provides a good heat sink.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.43.L576