Comparison of optical VCSEL models on the simulation of oxide-confined devices

We compare the results of different optical vertical-cavity surface-emitting laser models on the position-dependent effects of thin oxide apertures. Both scalar and vectorial models as well as hybrid models are considered. Physical quantities that are compared are resonance wavelength, threshold mat...

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Bibliographic Details
Published in:IEEE journal of quantum electronics 2001-12, Vol.37 (12), p.1618-1631
Main Authors: Bienstman, P., Baets, R., Vukusic, J., Larsson, A., Noble, M.J., Brunner, M., Gulden, K., Debernardi, P., Fratta, L., Bava, G.P., Wenzel, H., Klein, B., Conradi, O., Pregla, R., Riyopoulos, S.A., Seurin, J.-F.P., Shun Lien Chuang
Format: Article
Language:English
Subjects:
Apertures
Devices
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Gain
Laser modes
Lasers
Optical devices
Optical interconnections
Optical sensors
Optical surface waves
Optics
Oxides
Physics
Resonance
Scalars
Semiconductor lasers
Semiconductor lasers
laser diodes
Spreads
Surface emitting lasers
Thresholds
Vertical cavity surface emission lasers
Vertical cavity surface emitting lasers
Wavelengths
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Summary:We compare the results of different optical vertical-cavity surface-emitting laser models on the position-dependent effects of thin oxide apertures. Both scalar and vectorial models as well as hybrid models are considered. Physical quantities that are compared are resonance wavelength, threshold material gain, and modal stability. For large device diameters and low-order modes, the agreement between the different models is quite good. Larger differences occur when considering smaller devices and higher order modes. It is also observed that the spread in the resonance wavelengths is smaller than that for the threshold material gain.
ISSN:0018-9197
1558-1713
DOI:10.1109/3.970909