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A 20 GHz 8 bit multiplexer IC implemented with 0.5 mu m WN(x)/W-gate GaAs MESFET' s
An ultrahigh-speed 8 bit multiplexer (MUX) has been developed for future-generation optical-fiber communication systems having a data rate of 20 Gb/s. This IC was fabricated using a 0.5 mum WN(x)/W-gate GaAs MESFET process based on optical lithography, ion implantation, and furnace annealing for goo...
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Published in: | IEEE journal of solid-state circuits 1994-12, Vol.29 (12), p.1583-1588 |
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Main Authors: | , , , , , , , , |
Format: | Article |
Language: | English |
Online Access: | Get full text |
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Summary: | An ultrahigh-speed 8 bit multiplexer (MUX) has been developed for future-generation optical-fiber communication systems having a data rate of 20 Gb/s. This IC was fabricated using a 0.5 mum WN(x)/W-gate GaAs MESFET process based on optical lithography, ion implantation, and furnace annealing for good reproducibility and high throughput. The WN(x)/W bilayer gate has a low sheet resistance, improving the circuit high frequency performance. To attain 20 GHz operation, advanced circuit techniques for the source-coupled FET logic (SCFL) were introduced. A cross coupled source-follower (CCSF) was developed mainly for the highest speed buffers to enhance the bandwidth. The first-stage T-type flip-flop was designed with optimization techniques and operated up to 21.1 GHz |
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ISSN: | 0018-9200 |
DOI: | 10.1109/4.340435 |