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Dislocation structure in low-angle interfaces between bonded Si(001) wafers
Dislocation structures of interfaces between bonded (001) Si wafers with co-existing low-angle twist and tilt misorientations were studied by transmission electron microscopy. At dominating twist, a square screw dislocation network accommodates the twist, and interacts with steps at the interface, f...
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Published in: | Journal of materials science 2004-05, Vol.39 (9), p.3031-3039 |
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Main Authors: | , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that cite this one |
Online Access: | Get full text |
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Summary: | Dislocation structures of interfaces between bonded (001) Si wafers with co-existing low-angle twist and tilt misorientations were studied by transmission electron microscopy. At dominating twist, a square screw dislocation network accommodates the twist, and interacts with steps at the interface, forming 60-degree dislocations. As the step density, i.e., the tilt angle, increases relative to the twist angle, the density of so-called zigzag reactions increases. Finally, hexagonal dislocation meshes dominate the dislocation configuration. It was found that the plan-view observations give the crystallographic relations accurately. The structures of the dislocation configurations were analyzed using Bollmann's dualistic representation. The rotation axes and angles were determined. |
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ISSN: | 0022-2461 1573-4803 |
DOI: | 10.1023/B:JMSC.0000025829.40338.04 |