Schottky–ohmic transition in nickel silicide/SiC-4H system: is it really a solved problem?

The transition from Schottky to ohmic contact in the nickel silicide/SiC system during annealing from 600 to 950 °C was investigated by measuring the electrical properties of the contact and by analyzing the microstructure of the silicide/SiC interface. The graphite clusters formed by carbon atoms d...

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Bibliographic Details
Published in:Microelectronic engineering 2003-11, Vol.70 (2), p.519-523
Main Authors: La Via, F., Roccaforte, F., Raineri, V., Mauceri, M., Ruggiero, A., Musumeci, P., Calcagno, L., Castaldini, A., Cavallini, A.
Format: Article
Language:English
Subjects:
Applied sciences
Contact resistance
Electronics
Exact sciences and technology
Interfaces
Ni 2Si
Schottky
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
SiC
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Summary:The transition from Schottky to ohmic contact in the nickel silicide/SiC system during annealing from 600 to 950 °C was investigated by measuring the electrical properties of the contact and by analyzing the microstructure of the silicide/SiC interface. The graphite clusters formed by carbon atoms during silicidation are uniformly distributed into the silicide layer after annealing at 600 °C and they agglomerate into a thin layer far from the silicide/SiC interface after annealing at 950 °C. At this temperature an increase of the Schottky barrier height was measured, while deep level transient spectroscopy evidences the absence of the 0.5 eV peak related to the carbon vacancies.
ISSN:0167-9317
1873-5568
DOI:10.1016/S0167-9317(03)00464-7