Morphology-Dependent Carrier Accumulation Dynamics in Mixed Halide Perovskite Thin Films Caused by Phase Segregation

The phase segregation in mixed halide perovskites is recently found to improve the photoluminescence quantum yield (PLQY) of the perovskites by concentrating the carriers. However, how phase segregation affects the photoinduced carrier dynamics is unclear. Herein, we find that the phase segregation...

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Bibliographic Details
Published in:The journal of physical chemistry letters 2023-03, Vol.14 (11), p.2800-2806
Main Authors: Tang, Jianbo, Tian, Wenming, Sun, Fengke, Sun, Qi, Leng, Jing, Zhao, Shengli, Jin, Shengye
Format: Article
Language:English
Subjects:
Physical Insights into Materials and Molecular Properties
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Summary:The phase segregation in mixed halide perovskites is recently found to improve the photoluminescence quantum yield (PLQY) of the perovskites by concentrating the carriers. However, how phase segregation affects the photoinduced carrier dynamics is unclear. Herein, we find that the phase segregation in CH3NH3PbBr x I3–x mixed halide perovskite thin film is morphology-dependent by showing I-rich domains mainly along the grain boundaries. Ultrafast transient absorption (TA) and photoluminescence upconversion (PL-UC) spectroscopy measurements uncover that the carrier accumulation in the low energy I-rich domains includes two carrier transfer pathways. Carrier transfer from the Br-rich domain and the mixed phase to the I-rich domain is realized by consecutive hole (∼0.5 ps) and electron (
ISSN:1948-7185
1948-7185
DOI:10.1021/acs.jpclett.3c00332