Triboluminescence of ZnS:Mn Films Deposited on Quartz Substrates with ZnO Buffer Layers

Authors investigated the effect of ZnO films used as buffer layers on the triboluminescence (TrL) intensity of ZnS:Mn thin films on quartz substrates using the RF magnetron sputtering method and annealing technique. Highly oriented ZnO film was first deposited on quartz glass substrate and then the...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2002, Vol.41 (Part 1, No. 8), p.5259-5261
Main Authors: Onwona-Agyeman, Boateng, Xu, Chao-Nan, Shi, Wensheng, Suzuki, Morio, Zheng, Xu-Guang
Format: Article
Language:English
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Summary:Authors investigated the effect of ZnO films used as buffer layers on the triboluminescence (TrL) intensity of ZnS:Mn thin films on quartz substrates using the RF magnetron sputtering method and annealing technique. Highly oriented ZnO film was first deposited on quartz glass substrate and then the ZnS:Mn film was deposited on the highly oriented ZnO film. By annealing at 5% H2 in Ar ambient, the crystallinity of both ZnO and ZnS:Mn films was improved. Addition of the ZnO buffer layer improves the TrL intensity of the ZnS:Mn films. 26 refs.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.41.5259