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Thermoelectric properties of crystallized boron carbide thin films prepared by ion-beam evaporation
Thin films of B 12+ x C 3− x have been successfully prepared by the pulsed ion-beam evaporation (IBE) method on glass substrates without substrate heating or sample annealing. B 12+ x C 3− x bulk targets with nominal carbon contents of x=0–1.0 were synthesized by spark plasma sintering. Thin films p...
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Published in: | Thin solid films 2002-03, Vol.407 (1), p.132-135 |
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Main Authors: | , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Thin films of B
12+
x
C
3−
x
have been successfully prepared by the pulsed ion-beam evaporation (IBE) method on glass substrates without substrate heating or sample annealing. B
12+
x
C
3−
x
bulk targets with nominal carbon contents of
x=0–1.0 were synthesized by spark plasma sintering. Thin films prepared with the targets were found to consist of a B
12+
x
C
3−
x
phase and lattice parameters of the phase were comparable to that of the target. From these results, it has been found that B
12+
x
C
3−
x
thin films with various carbon contents were successfully prepared at room temperature. The thermoelectric properties of the thin films were measured and the B
13.0C
2.0 thin film exhibited the highest power factor at room temperature among the B
12+
x
C
3−
x
samples reported. |
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ISSN: | 0040-6090 1879-2731 |
DOI: | 10.1016/S0040-6090(02)00026-3 |