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Thermoelectric properties of crystallized boron carbide thin films prepared by ion-beam evaporation

Thin films of B 12+ x C 3− x have been successfully prepared by the pulsed ion-beam evaporation (IBE) method on glass substrates without substrate heating or sample annealing. B 12+ x C 3− x bulk targets with nominal carbon contents of x=0–1.0 were synthesized by spark plasma sintering. Thin films p...

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Bibliographic Details
Published in:Thin solid films 2002-03, Vol.407 (1), p.132-135
Main Authors: Suematsu, H., Kitajima, K., Ruiz, I., Kobayashi, K., Takeda, M., Shimbo, D., Suzuki, T., Jiang, W., Yatsui, K.
Format: Article
Language:English
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Summary:Thin films of B 12+ x C 3− x have been successfully prepared by the pulsed ion-beam evaporation (IBE) method on glass substrates without substrate heating or sample annealing. B 12+ x C 3− x bulk targets with nominal carbon contents of x=0–1.0 were synthesized by spark plasma sintering. Thin films prepared with the targets were found to consist of a B 12+ x C 3− x phase and lattice parameters of the phase were comparable to that of the target. From these results, it has been found that B 12+ x C 3− x thin films with various carbon contents were successfully prepared at room temperature. The thermoelectric properties of the thin films were measured and the B 13.0C 2.0 thin film exhibited the highest power factor at room temperature among the B 12+ x C 3− x samples reported.
ISSN:0040-6090
1879-2731
DOI:10.1016/S0040-6090(02)00026-3