Utilizing the SIMS technique in the study of grain boundary diffusion along twist grain boundaries in the Cu(Ni) system

The secondary ion mass spectrometry (SIMS) technique was used to study grain boundary diffusion along (100) twist grain boundaries in the Cu(Ni) system. Concentration profiles of Ni down Cu twist grain boundaries with nominal disorientation angles of 10°, Σ5 (36.87°), and 45°, were measured using th...

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Bibliographic Details
Published in:Acta materialia 2002-12, Vol.50 (20), p.5079-5084
Main Authors: Schwarz, S.M., Kempshall, B.W., Giannuzzi, L.A., Stevie, F.A.
Format: Article
Language:English
Subjects:
Applied sciences
Condensed matter: structure, mechanical and thermal properties
Cu(Ni)
Defects and impurities in crystals
microstructure
Exact sciences and technology
Grain and twin boundaries
Grain boundary diffusion
Metals. Metallurgy
Physics
SIMS
Structure of solids and liquids
crystallography
Twist grain boundaries
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Summary:The secondary ion mass spectrometry (SIMS) technique was used to study grain boundary diffusion along (100) twist grain boundaries in the Cu(Ni) system. Concentration profiles of Ni down Cu twist grain boundaries with nominal disorientation angles of 10°, Σ5 (36.87°), and 45°, were measured using the SIMS technique. The average activation energy for grain boundary diffusion, Q b, was found to be 245±22, 140±10, and 102±15 kJ/mol, for the 10°, Σ5, and 45° twist grain boundaries, respectively. The average grain boundary diffusion pre-exponential term, s δD bo, was found to be 9.6±1.24×10 −9, 1.1±0.17×10 −14, and 1.3±0.36×10 −16 m 3 /s, for the 10°, Σ5, and 45° twist grain boundaries, respectively.
ISSN:1359-6454
1873-2453
DOI:10.1016/S1359-6454(02)00362-2