Investigation of the nucleation and growth of SiC nanostructures on Si

Using in situ reflection high energy electron diffraction (RHEED), ex situ atomic force microscopy (AFM) and transmission electron microscopy (TEM) the early stages of SiC growth on Si during the carbonisation were investigated in a solid source molecular beam epitaxy equipment. Different mechanisms...

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Bibliographic Details

Published in:	Thin solid films 2000-12, Vol.380 (1), p.92-96
Main Authors:	Scharmann, F., Maslarski, P., Attenberger, W., Lindner, J.K.N., Stritzker, B., Stauden, Th, Pezoldt, J.
Format:	Article
Language:	English
Subjects:	Cross-disciplinary physics: materials science rheology Exact sciences and technology Grain size control Materials science Methods of deposition of films and coatings film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy Nucleation Physics Reflection high energy electron diffraction Silicon Silicon carbide
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