Influence of quantum well states on transport properties of double barrier junctions

A strong asymmetric behavior in the I–V characteristics and the tunnel magnetoresistance in asymmetric magnetic double-barrier junctions is predicted. This effect relates to formation of quantum well states in the middle metallic layer. The influence of the random fluctuations of the barrier and the...

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Bibliographic Details
Published in:Journal of magnetism and magnetic materials 2002-02, Vol.240 (1), p.146-148
Main Authors: Chshiev, M., Stoeffler, D., Vedyayev, A., Ounadjela, K.
Format: Article
Language:English
Subjects:
Thin films
Transport properties
Tunneling
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Summary:A strong asymmetric behavior in the I–V characteristics and the tunnel magnetoresistance in asymmetric magnetic double-barrier junctions is predicted. This effect relates to formation of quantum well states in the middle metallic layer. The influence of the random fluctuations of the barrier and the middle metallic layer thickness on the statistics of resonant levels is investigated.
ISSN:0304-8853
DOI:10.1016/S0304-8853(01)00767-3