Influence of 4H-SiC Growth Conditions on Micropipe Dissociation

Authors investigated the influence of 4H-SiC growth conditions on micropipe dissociation. The C/Si ratio of the reactant gases for CVD epitaxial growth has a major influence on the probability of micropipe dissociation. A high probability of micropipe dissociation of over 98% was obtained at a low C...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2002-10, Vol.41 (Part 2, No. 10B), p.L1137-L1139
Main Authors: Kamata, Isaho, Tsuchida, Hidekazu, Jikimoto, Tamotsu, Izumi, Kunikazu
Format: Article
Language:English
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Summary:Authors investigated the influence of 4H-SiC growth conditions on micropipe dissociation. The C/Si ratio of the reactant gases for CVD epitaxial growth has a major influence on the probability of micropipe dissociation. A high probability of micropipe dissociation of over 98% was obtained at a low C/Si ratio. Authors also investigated the surface morphology of 4H-SiC epilayers around dissociated and continuous micropipes grown under different C/Si growth conditions. 7 refs.
ISSN:0021-4922
DOI:10.1143/JJAP.41.L1137