Electrical and optical characteristics of a Si-doped (Al)GaInAs digital alloy/AlInAs-distributed Bragg mirrors on InP

We report electrical and optical characteristics of a Si-doped (Al)GaInAs digital alloy/AlInAs Bragg mirror lattice matched to InP grown by molecular beam epitaxy. A 98.2% reflectivity with a 107 nm stop band width centred at 1.54 μ m is obtained. An average voltage drop of 16 mV per period at a cur...

Full description

Saved in:
Bibliographic Details
Published in:Superlattices and microstructures 2000-07, Vol.28 (1), p.29-33
Main Authors: Dias, I.F.L., Duarte, J.L., Laureto, E., Gelamo, R.V., Menezes, E.A., Harmand, J.C.
Format: Article
Language:English
Subjects:
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lenses, prisms and mirrors
Optical elements, devices, and systems
Optics
Physics
semiconductor, digital alloy, Brag mirror
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We report electrical and optical characteristics of a Si-doped (Al)GaInAs digital alloy/AlInAs Bragg mirror lattice matched to InP grown by molecular beam epitaxy. A 98.2% reflectivity with a 107 nm stop band width centred at 1.54 μ m is obtained. An average voltage drop of 16 mV per period at a current density of 1 KA cm−2is observed for a mean electron concentration of about 5.5 × 1018cm−3. The influence of structural and intrinsic properties of the heterostructure on the electrical resistivity and optical reflectivity is analysed.
ISSN:0749-6036
1096-3677
DOI:10.1006/spmi.2000.0847