Ka-band and MMIC pHEMT-based VCO's with low phase-noise properties

Two pseudomorphic high electron-mobility transistor (pHEMT)-based Ka-band voltage-controlled oscillators (VCO's), which have exhibited novel close-to-carrier phase-noise properties in conjunction with output powers greater than previously reported heterojunction bipolar transistor (HBT) based o...

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Bibliographic Details
Published in:	IEEE transactions on microwave theory and techniques 1998-10, Vol.46 (10), p.1531-1536
Main Authors:	Garner, P.J., Howes, M.J., Snowden, C.M.
Format:	Article
Language:	eng
Subjects:	Frequency measurement Heterojunction bipolar transistors MMICs Noise measurement Phase measurement Phase noise PHEMTs Power generation Tuning Voltage-controlled oscillators
Online Access:	Get full text
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Summary:	Two pseudomorphic high electron-mobility transistor (pHEMT)-based Ka-band voltage-controlled oscillators (VCO's), which have exhibited novel close-to-carrier phase-noise properties in conjunction with output powers greater than previously reported heterojunction bipolar transistor (HBT) based oscillators, are presented in this paper. Good low phase noises of at least -70 and -75 dBc/Hz at an offset of 100 kHz around 38 GHz have been measured for the two different VCO designs over reasonable frequency tuning ranges with flat or linear output-power tuning in these ranges. Both designs show a strong dependence between phase noise and tuning-element bias conditions.
ISSN:	0018-9480 1557-9670