Growth of Thick Hexagonal GaN Layer on GaAs (111)A Surfaces for Freestanding GaN by Metalorganic Hydrogen Chloride Vapor Phase Epitaxy

Thick hexagonal GaN was grown on GaAs (111)A surfaces by metalorganic hydrogen chloride vapor phase epitaxy (MOHVPE) in the temperature range from 920°C to 1000°C. Both the surface morphology and the photoluminescence (PL) property of the grown layer were greatly improved with increase of the growth...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2000, Vol.39 (7B), p.L703-L706
Main Authors: Yoshinao Kumagai, Yoshinao Kumagai, Hisashi Murakami, Hisashi Murakami, Akinori Koukitu, Akinori Koukitu, Kikurou Takemoto, Kikurou Takemoto, Hisashi Seki, Hisashi Seki
Format: Article
Language:English
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Summary:Thick hexagonal GaN was grown on GaAs (111)A surfaces by metalorganic hydrogen chloride vapor phase epitaxy (MOHVPE) in the temperature range from 920°C to 1000°C. Both the surface morphology and the photoluminescence (PL) property of the grown layer were greatly improved with increase of the growth temperature up to 1000°C. However, the full-width at half maximum (FWHM) in the ω mode X-ray diffraction (XRD) of the GaN (0002) plane increased with increasing growth temperature above 960°C, due to the bending of the grown layer. The bending could be suppressed by growing a thicker layer, even at 1000°C. A mirror-like GaN layer with the FWHM value of 4.7 min was obtained by growing a 100-µm-thick layer at 1000°C, which indicates that the growth of a thick GaN layer on the GaAs (111)A surface is a promising method for the preparation of freestanding GaN substrates.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.39.L703