Extrinsic base optimization for high-performance RF SiGe heterojunction bipolar transistors

A comprehensive study on the effect of extrinsic base optimization on the RF performance of an advanced SiGe HBT is presented. An optimized extrinsic poly base with its interface to the epi-base passivated by boron ions is demonstrated to enhance the f max and the current gain almost two times and t...

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Bibliographic Details
Published in:IEEE electron device letters 1997-09, Vol.18 (9), p.426-428
Main Authors: Tang, R., Ford, J., Pryor, B., Anandakugan, S., Welch, P., Burt, C.
Format: Article
Language:English
Subjects:
Boron
Germanium silicon alloys
Heterojunction bipolar transistors
Low-frequency noise
Noise figure
Noise measurement
Noise reduction
Radio frequency
Silicon germanium
Voltage
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Summary:A comprehensive study on the effect of extrinsic base optimization on the RF performance of an advanced SiGe HBT is presented. An optimized extrinsic poly base with its interface to the epi-base passivated by boron ions is demonstrated to enhance the f max and the current gain almost two times and to reduce the low-frequency 1/f noise ten times and noise figure (NF) 0.5 dB, achieving f max of 45 GHz, 1/f noise corner frequency of 700 Hz at I/sub B/=1.0 μA, NF/spl les/1.0 dB at 900 MHz. Early voltage V/sub A/ of /spl ges/200 V is achieved, while maintaining a BV/sub CEO/ of /spl ges/8.0 V.
ISSN:0741-3106
1558-0563
DOI:10.1109/55.622518