Emergent properties from CuPd alloy films under near-infrared excitation

Noble-transition metal alloys offer emergent optical and electronic properties for near-infrared (NIR) optoelectronic devices. We investigate the optical and electronic properties of CuxPd1−x alloy thin films and their ultrafast electron dynamics under NIR excitation. Ultraviolet photoelectron spect...

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Bibliographic Details
Published in:The Journal of chemical physics 2022-11, Vol.157 (17), p.174702-174702
Main Authors: Manoukian, Gregory A., Kizilkaya, Orhan, Lendinez, Sergi, Manuel, Luis D. B., Leite, Tiago R., Shirali, Karunya S., Shelton, William A., Sprunger, Phillip T., Baxter, Jason B., McPeak, Kevin M.
Format: Article
Language:English
Subjects:
Density functional theory
Dilution
Excitation spectra
Near infrared radiation
Optical properties
Optoelectronic devices
Palladium
Photoelectrons
Photoexcitation
Thermalization (energy absorption)
Thin films
Transition metal alloys
Transmissivity
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Summary:Noble-transition metal alloys offer emergent optical and electronic properties for near-infrared (NIR) optoelectronic devices. We investigate the optical and electronic properties of CuxPd1−x alloy thin films and their ultrafast electron dynamics under NIR excitation. Ultraviolet photoelectron spectroscopy measurements supported by density functional theory calculations show strong d-band hybridization between the Cu 3d and Pd 4d bands. These hybridization effects result in emergent optical properties, most apparent in the dilute Pd case. Time-resolved terahertz spectroscopy with NIR (e.g., 1550 nm) excitation displays composition-tunable electron dynamics. We posit that the negative peak in the normalized increment of transmissivity (ΔT/T) below 2 ps from dilute Pd alloys is due to non-thermalized hot-carrier generation. On the other hand, Pd-rich alloys exhibit an increase in ΔT/T due to thermalization effects upon ultrafast NIR photoexcitation. CuxPd1−x alloys in the dilute Pd regime may be a promising material for future ultrafast NIR optoelectronic devices.
ISSN:0021-9606
1089-7690
DOI:10.1063/5.0102066