Characterization and simulation of GaSb device-related properties

Device related parameters of GaSb are characterized and simulated based on measurements of photovoltaic cells. Internal quantum efficiencies are simulated to quantify the contributions from band-gap narrowing and the main recombination mechanisms, such as Auger, radiative, and Shockley-Read-Hall rec...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2000-02, Vol.47 (2), p.448-457
Main Authors: Stollwerck, G., Sulima, O.V., Bett, A.W.
Format: Article
Language:English
Subjects:
Augers
CARRIER DENSITY
CHARGE CARRIERS
Devices
Electric potential
ELECTRICAL PROPERTIES
GALLIUM ANTIMONIDES
Gallium compounds
MATERIALS SCIENCE
Mathematical analysis
Photovoltaic cells
QUANTUM EFFICIENCY
RECOMBINATION
Simulation
SOLAR CELLS
SOLAR ENERGY
Voltage
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Summary:Device related parameters of GaSb are characterized and simulated based on measurements of photovoltaic cells. Internal quantum efficiencies are simulated to quantify the contributions from band-gap narrowing and the main recombination mechanisms, such as Auger, radiative, and Shockley-Read-Hall recombination. A detailed study of the recombination mechanisms values shows differences between literature data and data derived from comparison of simulation results with measurements on real devices. A new evaluation of these data is given. The evaluation of the band-gap narrowing in n-GaSb is performed by comparison of measurements and simulations of the injection component of the dark current I/sub 01/ and open-circuit voltage. For the first time, a range of possible values for the intrinsic carrier concentration of GaSb at room temperature is given, based on theoretical calculations, and proven with comparison of measured lot and open-circuit voltages of GaSb photovoltaic devices.
ISSN:0018-9383
1557-9646
DOI:10.1109/16.822293