Characterization and modeling of nonlinear trapping effects in power SiC MESFETs

Trapping effects in power SiC MESFETs are investigated using a pulsed I-V pulsed S-parameters measurement system. It is shown that the main effect comes from substrate (buffer) traps sensitive to the drain-source voltage. Moreover a nonlinear model of the trapping phenomenon, taking into account the...

Full description

Saved in:
Bibliographic Details
Main Authors: Siriex, D., Barataud, D., Sommet, R., Noblanc, O., Ouarch, Z., Brylinski, Ch, Teyssier, J.P., Quere, R.
Format: Conference Proceeding
Language:English
Subjects:
Electron traps
MESFETs
Power measurement
Power system modeling
Predictive models
Pulse measurements
Radioactive decay
Scattering parameters
Silicon carbide
Voltage
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Trapping effects in power SiC MESFETs are investigated using a pulsed I-V pulsed S-parameters measurement system. It is shown that the main effect comes from substrate (buffer) traps sensitive to the drain-source voltage. Moreover a nonlinear model of the trapping phenomenon, taking into account the electron capture and emission with different time constants allows one to predict experimentally observed I-V and RF power performances of the devices.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2000.863294