Origins of defects in self assembled GaP islands grown on Si(001) and Si(111)

Microstructures of GaP epitaxial islands grown on Si(001) and Si(111) by chemical beam epitaxy have been investigated by transmission electron microscopy (TEM). Results indicate that planar-defect free GaP islands of sizes

Bibliographic Details

Published in:	Thin solid films 1999-12, Vol.357 (1), p.53-56
Main Authors:	Narayanan, V., Sukidi, N., Bachmann, K.J., Mahajan, S.
Format:	Article
Language:	English
Subjects:	Defects GaP islands High resolution transmission electron microscopy Si substrates
Citations:	Items that this one cites Items that cite this one
Online Access:	Get full text
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