Metal wire definition by high resolution imprint and lift-off

Metal wires down to 25 nm width were fabricated using a simple imprint technology yet showing high resolution. The patterns were transfered with high geometric control from the silicon mold into a 100 nm thick PMMA layer by pressing the mold into the resist at a temperature of 140°C for 20 min. Then...

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Bibliographic Details
Published in:Microelectronic engineering 1999, Vol.46 (1), p.179-181
Main Authors: Eisert, D., Braun, W., Kuhn, S., Koeth, J., Forchel, A.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:Metal wires down to 25 nm width were fabricated using a simple imprint technology yet showing high resolution. The patterns were transfered with high geometric control from the silicon mold into a 100 nm thick PMMA layer by pressing the mold into the resist at a temperature of 140°C for 20 min. Then the PMMA layer was thinned by Argon plasma etching and 10 nm thick Gold wires were defined by evaporation and lift-off. Similarly, by imprint in a three layer resist structure with an intermediate metal layer used as an etch stop 25 nm wide wires could be defined with larger process latitude.
ISSN:0167-9317
1873-5568
DOI:10.1016/S0167-9317(99)00056-8