Metastable population of self-organized InAs/GaAs quantum dots

In the present work, we report on the investigation of a p-n heterostructure with InAs/GaAs quantum dots (QD) by capacitance-voltage and deep level transient spectroscopy. We have observed controllable and reversible metastable population of the energy states of quantum dots and interface in the str...

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Bibliographic Details
Published in:Journal of electronic materials 1999-05, Vol.28 (5), p.491-495
Main Authors: Sobolev, M. M., Kovsh, A. R., Ustinov, V. M., Egorov, A. Y., Zhukov, A. E.
Format: Article
Language:English
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Summary:In the present work, we report on the investigation of a p-n heterostructure with InAs/GaAs quantum dots (QD) by capacitance-voltage and deep level transient spectroscopy. We have observed controllable and reversible metastable population of the energy states of quantum dots and interface in the structure containing one plane of InAs QDs as a function of temperature of isochronous annealing as well as under bias-on-bias-off cooling conditions and white light illumination. This effect was attributed to the change in the Fermi level position due to the hole capture on self-trapped defects similar to the DX center in GaAs after isochronous annealing and white light illumination.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-999-0100-4