Photoenhanced Electrochemical Etching of n-GaN Forced by Negative Bias

Bias-dependent photoenhanced electrochemical etching of n-GaN using CH 3 COOH solution and KOH solution is described. During etching of n-GaN under an illumination of 90 mW/cm 2 , n-GaN was etched at a rate of 8 nm/min in 0.04 M of KOH solution, and negligible etching was shown in 1% CH 3 COOH solut...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2001-10, Vol.40 (10B), p.L1086-L1088
Main Authors: Seo, Jae Won, Oh, Chang Suck, Yang, Jeon Wook, Yoon, Chang Joo, Lim, Kee Young, Lee, Hyung Jae
Format: Article
Language:English
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Summary:Bias-dependent photoenhanced electrochemical etching of n-GaN using CH 3 COOH solution and KOH solution is described. During etching of n-GaN under an illumination of 90 mW/cm 2 , n-GaN was etched at a rate of 8 nm/min in 0.04 M of KOH solution, and negligible etching was shown in 1% CH 3 COOH solution at zero substrate bias. However, n-GaN was successfully etched by applying negative bias, and an etch rate of 286 nm/min resulted from the etching in 1% CH 3 COOH solution at a bias of -9 V and an illumination intensity of 125 mW/cm 2 . Etch rate increased with negative bias and illumination intensity for etching in both solutions.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.40.L1086