Hot-Carrier Reliability for Si and SiGe HBTs: Aging Procedure, Extrapolation Model Limitations and Applications

This paper discusses on hot-carrier methodologies for SiGe HBTs. First, it reveals comparable behaviors for Si and SiGe NPN bipolar transistors, allowing to have similar reliability approach for these devices. Second, while in an industrial environment accelerated wafer level tests are commonly used...

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Bibliographic Details
Published in:Microelectronics and reliability 2001-09, Vol.41 (9), p.1307-1312
Main Authors: Revil, N., Garros, X.
Format: Article
Language:English
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Summary:This paper discusses on hot-carrier methodologies for SiGe HBTs. First, it reveals comparable behaviors for Si and SiGe NPN bipolar transistors, allowing to have similar reliability approach for these devices. Second, while in an industrial environment accelerated wafer level tests are commonly used, it is shown that long-term package level tests could be mandatory as new failure modes are detected at low field. Finally, a general qualification procedure has been developed and applied, demonstrating in particular a high reliability level for the considered SiGe NPN HBTs without a significant impact of the Ge introduction process. copyright 2001 Elsevier Science Ltd. All rights reserved.
ISSN:0026-2714
1872-941X
DOI:10.1016/S0026-2714(01)00203-7